Time-of-flight 테크닉을 이용한 수소화된 비정질 규소 p-i-n 형 다이오드의 배부 전기장 profile 에 관한연구Internal field profile in amorphous hydrogenated silicon p-i-n diode by time-of-flight technique

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Advisors
이주천Lee, Choo-Chon
Description
한국과학기술원 : 물리학과,
Publisher
한국과학기술원
Issue Date
1987
Identifier
65601/325007 / 000851454
Language
kor
Description

학위논문(석사) - 한국과학기술원 : 물리학과, 1987.2, [ [iii], 46 p. ]

URI
http://hdl.handle.net/10203/48168
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=65601&flag=dissertation
Appears in Collection
PH-Theses_Master(석사논문)
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