다결정 실리콘 박막 트랜지스터에서의 바이어스에 의한 결함 생성에 관한 연구Bias stress induced defects in polycrystalline silicon thin film transistor

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Advisors
신성철researcher이주천researcherShin, Sung-ChulresearcherLee, Choo-Choonresearcher
Description
한국과학기술원 : 물리학과,
Publisher
한국과학기술원
Issue Date
1996
Identifier
108882/325007 / 000895065
Language
kor
Description

학위논문(박사) - 한국과학기술원 : 물리학과, 1996.8, [ vii, 92 p. ]

Keywords

다결정 실리콘; 박막 트랜지스터; Activation energy; Grain boundary; Simulation; Thin film transistor; Poly-Si; 활성화 에너지; 모델링

URI
http://hdl.handle.net/10203/47538
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=108882&flag=dissertation
Appears in Collection
PH-Theses_Ph.D.(박사논문)
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