(The) study of the characteristics of the dual frequency capacitively coupled plasma(DFCCP)

Abstract

Dual Frequency Capacitively Coupled Plasma(DFCCP) has been used in the semiconductor manufacturing for many years. But the physics of the DFCCP is not fully understood. The purpose of this thesis is to understand the physics of the DFCCP. There are four chapter of this thesis. The first chapter deals with the characteristics of the Capacitively Coupled Plasma(CCP) and Inductively Coupled Plasma(ICP). Generally, operation regime of the CCP and ICP is different. Efficient operation pressure of CCP is 20 - 200 mTorr and ICP is 1 - 20 mTorr. Which means that CCP is efficient in the high pressure regime and ICP is efficient in the low pressure regime. To see the power dissipation characteristics of the ICP and CCP, CCP and ICP hybrid plasma source is developed. One power source is used to de-liver power CCP electrode and Induction coil simultaneously. As operation pressure increased, dissipation power ratio through CCP electrode is increase and dissipation power ratio through ICP is decreased. At 10 mTorr, 90% of delivered power is dissipated through induction coil and 50% of delivered power is dissipated through induction coil at pressure 100 mTorr. Ohmic(collisional) heating of electron is dominant in the CCP and stochastic(collisionless) electron heating is dominant in the ICP. So CCP is dominant power dissipation channel in the high pressure regime and ICP is dominant power dissipation channel in the low pressure regime. In the second chapter, we examine the power dissipation characteristics of the dual frequency capacitively coupled plasma. If high frequency power is fixed and low frequency power is increased, then low frequency power dissipation characteristics is changed. There are two power dissipation mechanism in the CCP. One is power dissipation in the bulk plasma which generate plasma. The other is power dissipation in the sheath which accelerate ions to the electrode. It is well known that ion power dissipation is dominant in the low frequency operation...