DC Field | Value | Language |
---|---|---|
dc.contributor.author | Son, H | ko |
dc.contributor.author | Kim, J | ko |
dc.contributor.author | Kim, M | ko |
dc.contributor.author | Hong, Songcheol | ko |
dc.date.accessioned | 2008-05-20T07:01:11Z | - |
dc.date.available | 2008-05-20T07:01:11Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2001-04 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.40, no.4B, pp.2801 - 2803 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/4613 | - |
dc.description.abstract | The memory operation of a self-assembled InAs quantum dot heterostructure field effect transistor (FET) is presented. The amount of trapped electrons in the quantum dots determines the gate-source capacitance and the drain current at a gate bias. In capacitance-voltage (C-V) measurement at low frequency, the quantum dots respond to the signal and a difference of capacitance was observed. These results imply that the memory operation is due to the charge trapping effect of InAs quantum dots. | - |
dc.description.sponsorship | We would like to thank J. Park, D. baek, and S. Koh in Quantum Electronic labtory at KAISTfor their useful discussions. We also appreciate the support of the QSRC, Dongguk Univ. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | INST PURE APPLIED PHYSICS | - |
dc.subject | PHOTOCONDUCTIVITY | - |
dc.title | Memory operation of InAs quantum dot heterostructure field effect transistor | - |
dc.type | Article | - |
dc.identifier.wosid | 000170771900048 | - |
dc.identifier.scopusid | 2-s2.0-0035300635 | - |
dc.type.rims | ART | - |
dc.citation.volume | 40 | - |
dc.citation.issue | 4B | - |
dc.citation.beginningpage | 2801 | - |
dc.citation.endingpage | 2803 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Hong, Songcheol | - |
dc.contributor.nonIdAuthor | Son, H | - |
dc.contributor.nonIdAuthor | Kim, J | - |
dc.contributor.nonIdAuthor | Kim, M | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | self-assembled InAs quantum dot | - |
dc.subject.keywordAuthor | quantum dot heterostructure FET | - |
dc.subject.keywordAuthor | C-V measurement | - |
dc.subject.keywordAuthor | capacitance | - |
dc.subject.keywordAuthor | memory operation | - |
dc.subject.keywordPlus | PHOTOCONDUCTIVITY | - |
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