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Results 31-40 of 95 (Search time: 0.007 seconds).
| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| A 1.83 GHz 28.5 dBm CMOS Power Up-Mixer Paek, Ji-Seon; Hong, Song-Cheol, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.19, no.6, pp.389 - 391, 2009-06 | |
| A Low-Parasitic and Common-Centroid Cross-Coupled CMOS Transistor Structure for High-Frequency VCO Design Lee, In-Young; Yun, Seok-Ju; Oh, Seung-Min; Lee, SG; Yun, SJ; Lee, Sang-Gug, IEEE ELECTRON DEVICE LETTERS, v.30, pp.532 - 534, 2009-05 | |
| An integratable dual metal gate CMOS process using an ultrathin aluminum nitride buffer layer Park, CS; Cho, Byung Jin; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.24, no.5, pp.298 - 300, 2003-05 | |
| Molybdenum gate work function engineering for ultra-thin-body silicon-on-insulator (UTB SOI) MOSFETs Ha, DW; Ranade, P; Choi, Yang-Kyu; Lee, JS; King, TJ; Hu, CM, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.42, no.4B, pp.1979 - 1982, 2003-04 | |
| Skewed Flip-Flop and Mixed-V-t Gates for Minimizing Leakage in Sequential Circuits Seomun, Jun; Kim, Jae-Hyun; Shin, Young-Soo, IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, v.27, pp.1956 - 1968, 2008-11 | |
| Thermally stable fully silicided Hf-silicide metal-gate electrode Park, CS; Cho, Byung Jin; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.6, pp.372 - 374, 2004-06 | |
| Image-rejection CMOS low-noise amplifier design optimization techniques Nguyen, TK; Oh, NJ; Cha, CY; Oh, YH; Ihm, GJ; Lee, Sang-Gug, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.53, pp.538 - 547, 2005-02 | |
| Power analysis of VLSI interconnect with RLC tree models and model reduction Shin, Youngsoo; Lee, J, JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS, v.15, no.3, pp.399 - 408, 2006-06 | |
| 360-mu W/1 mW complementary cross-coupled differential Colpitts LC-VCO/QVCO in 0.25-mu m CMOS Hong, JP; Yun, SJ; Lee, Sang-Gug, IEICE TRANSACTIONS ON ELECTRONICS, v.E90C, pp.2289 - 2292, 2007-12 | |
| A low-power highly linear cascoded multiple-gated transistor CMOS RF amplifier with 10 dB IP3 improvement (vol 13, pg 205, 2003) Nam, I; Ko, B; Lee, Kwyro; Kim, TW; Kim, B, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.13, pp.420 - 422, 2003-09 |