Results 1-5 of 5 (Search time: 0.004 seconds).
NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
---|---|
MOS characteristics of synthesized HfAlON-HfO2 stack using AIN-HfO2 Park, CS; Cho, Byung Jin; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.9, pp.619 - 621, 2004-09 | |
An integratable dual metal gate CMOS process using an ultrathin aluminum nitride buffer layer Park, CS; Cho, Byung Jin; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.24, no.5, pp.298 - 300, 2003-05 | |
Thermally stable fully silicided Hf-silicide metal-gate electrode Park, CS; Cho, Byung Jin; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.6, pp.372 - 374, 2004-06 | |
Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process Park, CS; Cho, Byung Jin; Balasubramanian, N; Kwong, DL, THIN SOLID FILMS, v.462, pp.15 - 18, 2004-09 | |
MOS characteristics of substituted Al gate on high-kappa dielectric Park, CS; Cho, Byung Jin; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.11, pp.725 - 727, 2004-11 |
Discover