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NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
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Effect of Forming Gas High-Pressure Annealing on Metal-Ferroelectric-Semiconductor Hafnia Ferroelectric Tunnel Junction Hwang, Junghyeon; Goh, Youngin; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.41, no.8, pp.1193 - 1196, 2020-08 | |
Excellent Reliability and High-Speed Antiferroelectric HfZrO2 Tunnel Junction by a High-Pressure Annealing Process and Built-In Bias Engineering Goh, Youngin; Hwang, Junghyeon; Jeon, Sanghun, ACS APPLIED MATERIALS & INTERFACES, v.12, no.51, pp.57539 - 57546, 2020-12 |
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