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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Demonstration of High Ferroelectricity (P-r similar to 29 mu C/cm(2)) in Zr Rich HfxZr1-xO2 Films Das, Dipjyoti; Gaddam, Venkateswarlu; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.41, no.1, pp.34 - 37, 2020-01 | |
| Insertion of HfO2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors Gaddam, Venkateswarlu; Das, Dipjyoti; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.2, pp.745 - 750, 2020-02 | |
| High-k HfxZr1-xO2 Ferroelectric Insulator by Utilizing High Pressure Anneal Das, Dipjyoti; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.6, pp.2489 - 2494, 2020-06 | |
| Broad spectral responsivity in highly photoconductive InZnO/MoS2 heterojunction phototransistor with ultrathin transparent metal electrode Das, Dipjyoti; Park, Junghak; Ahn, Minho; Park, Sungho; Hur, Jihyun; Jeon, Sanghun, NANOTECHNOLOGY, v.31, no.3, 2020-01 |
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