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NO	Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1	Atomic-scale etching of hexagonal boron nitride for device integration based on two-dimensional materials Park, Hamin; Shin, Gwang Hyuk; Lee, Khang June; Choi, Sung-Yool, NANOSCALE, v.10, no.32, pp.15205 - 15212, 2018-08
2	Pyridinic-N-Doped Graphene Paper from Perforated Graphene Oxide for Efficient Oxygen Reduction Bang, Gyeong Sook; Shim, Gi Woong; Shin, Gwang Hyuk; Jung, Dae Yool; Park, Hamin; Hong, Won Gi; Choi, Jinseong; Lee Jaeseung; Choi, Sung-Yool, ACS OMEGA, v.3, no.5, pp.5522 - 5530, 2018-05
3	Vertical-tunneling field-effect transistor based on MoTe2/MoS2 2D-2D heterojunction Koo, Bondae; Shin, Gwang Hyuk; Park, Hamin; Kim, Hojin; Choi, Sung-Yool, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.51, no.47, pp.475101, 2018-10
4	Vertical-Tunnel Field-Effect Transistor Based on a Silicon–MoS2 Three-Dimensional–Two-Dimensional Heterostructure Shin, Gwang Hyuk; Koo, Bondae; Park, Hamin; Woo, Youngjun; Lee, Jae Eun; Choi, Sung-Yool, ACS APPLIED MATERIALS & INTERFACES, v.10, no.46, pp.40212 - 40218, 2018-11

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