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NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
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Effect of dysprosium and lutetium metal buffer layers on the resistive switching characteristics of Cu-Sn alloy-based conductive-bridge random access memory Vishwanath, Sujaya Kumar; Woo, Hyunsuk; Jeon, Sanghun, NANOTECHNOLOGY, v.29, no.38, 2018-09 | |
Enhanced tunneling electroresistance effects in HfZrO-based ferroelectric tunnel junctions by high-pressure nitrogen annealing Goh, Youngin; Jeon, Sanghun, APPLIED PHYSICS LETTERS, v.113, no.5, 2018-07 | |
The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2 Goh, Youngin; Jeon, Sanghun, NANOTECHNOLOGY, v.29, no.33, 2018-08 | |
Improved optical performance of multi-layer MoS2 phototransistor with see-through metal electrode Park, Junghak; Das, Dipjyoti; Ahn, Minho; Park, Sungho; Hur, Jihyun; Jeon, Sanghun, NANO CONVERGENCE, v.6, no.1, 2019-12 | |
Transparent and Flexible Mayan-Pyramid-based Pressure Sensor using Facile-Transferred Indium tin Oxide for Bimodal Sensor Applications Jung, Minhyun; Vishwanath, Sujaya Kumar; Kim, Jihoon; Ko, Dae-Kwan; Park, Myung-Jin; Lim, Soo-Chul; Jeon, Sanghun, SCIENTIFIC REPORTS, v.9, 2019-10 | |
Amorphous FeZr metal for multi-functional sensor in electronic skin Jung, Minhyun; Lee, Eunha; Kim, Dongseuk; Kim, Kyungkwan; Yun, Changjin; Lee, Hyangsook; Kim, Heegoo; Rhie, Kungwon; Jeon, Sanghun, NPG Flexible Electronics, v.3, no.1, 2019-12 |
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