Search

Start a new search
Current filters:
Add filters:
  • Results/Page
  • Sort items by
  • In order
  • Authors/record

Results 1-10 of 13 (Search time: 0.005 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1
Enhancement of resistive switching properties in Al2O3 bilayer-based atomic switches: multilevel resistive switching

Vishwanath, Sujaya Kumar; Woo, Hyunsuk; Jeon, Sanghun, NANOTECHNOLOGY, v.29, no.23, 2018-06

2
Discharge Current Analysis Estimating the Defect Sites in Amorphous Hafnia Thin-Film Transistor

Goh, Youngin; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.8, pp.3264 - 3268, 2018-08

3
Effect of dysprosium and lutetium metal buffer layers on the resistive switching characteristics of Cu-Sn alloy-based conductive-bridge random access memory

Vishwanath, Sujaya Kumar; Woo, Hyunsuk; Jeon, Sanghun, NANOTECHNOLOGY, v.29, no.38, 2018-09

4
First-order reversal curve diagrams for characterizing ferroelectricity of Hf0.5Zr0.5O2 films grown at different rates

Goh, Youngin; Jeon, Sanghun, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.36, no.5, 2018-09

5
Quantitative analysis of charge trapping and classification of sub-gap states in MoS2 TFT by pulse I-V method

Park, Junghak; Hur, Ji-Hyun; Jeon, Sanghun, NANOTECHNOLOGY, v.29, no.17, 2018-04

6
Enhanced tunneling electroresistance effects in HfZrO-based ferroelectric tunnel junctions by high-pressure nitrogen annealing

Goh, Youngin; Jeon, Sanghun, APPLIED PHYSICS LETTERS, v.113, no.5, 2018-07

7
Scalable and facile synthesis of stretchable thermoelectric fabric for wearable self-powered temperature sensors

Jung, Minhyun; Jeon, Sanghun; Bae, Jihyun, RSC ADVANCES, v.8, no.70, pp.39992 - 39999, 2018-12

8
The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2

Goh, Youngin; Jeon, Sanghun, NANOTECHNOLOGY, v.29, no.33, 2018-08

9
Non-volatile resistive switching in CuBi-based conductive bridge random access memory device

Vishwanath, Sujaya Kumar; Woo, Hyunsuk; Jeon, Sanghun, APPLIED PHYSICS LETTERS, v.112, no.25, 2018-06

10
Resistive switching characteristics of a modified active electrode and Ti buffer layer in Cu-Se-based atomic switch

Woo, Hyunsuk; Vishwanath, Sujaya Kumar; Jeon, Sanghun, JOURNAL OF ALLOYS AND COMPOUNDS, v.753, pp.551 - 557, 2018-07

rss_1.0 rss_2.0 atom_1.0