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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium–gallium–zinc oxide thin-film transistor Nam, Yunyong; Kim, Hee-Ok; Cho, Sung Haeng; Hwang, Chi-Sun; Kim, Taeho; Jeon, Sanghun; Park, Sang-Hee Ko, Journal of Information Display, v.17, no.2, pp.65 - 71, 2016-04 |
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