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NO	Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1	High mobility and high stability glassy metal-oxynitride materials and devices Lee, Eunha; Kim, Taeho; Benayad, Anass; Hur, Jihyun; Park, Gyeong-Su; Jeon, Sanghun, SCIENTIFIC REPORTS, v.6, 2016-04
2	Pulse I-V characterization of a nanocrystalline oxide device with sub-gap density of states Kim, Taeho; Hur, Ji-Hyun; Jeon, Sanghun, NANOTECHNOLOGY, v.27, no.21, 2016-05
3	The influence of interfacial defects on fast charge trapping in nanocrystalline oxide-semiconductor thin film transistors Kim, Taeho; Hur, Jihyun; Jeon, Sanghun, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.31, no.5, 2016-05
4	The Influence of Hydrogen on Defects of In-Ga-Zn-O Semiconductor Thin-Film Transistors With Atomic-Layer Deposition of Al2O3 Kim, Taeho; Nam, Yunyong; Hur, Jihyun; Park, Sang-Hee Ko; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.37, no.9, pp.1131 - 1134, 2016-09
5	Effect of hydrogen on dynamic charge transport in amorphous oxide thin film transistors Kim, Taeho; Nam, Yunyong; Hur, Ji-Hyun; Park, Sang-Hee Ko; Jeon, Sanghun, NANOTECHNOLOGY, v.27, no.32, 2016-08
6	Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium–gallium–zinc oxide thin-film transistor Nam, Yunyong; Kim, Hee-Ok; Cho, Sung Haeng; Hwang, Chi-Sun; Kim, Taeho; Jeon, Sanghun; Park, Sang-Hee Ko, Journal of Information Display, v.17, no.2, pp.65 - 71, 2016-04

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