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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Dislocation effects in FinFETs for different III-V compound semiconductors Hur, Ji-Hyun; Jeon, Sanghun, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.49, no.15, 2016-04 | |
| III-V compound semiconductors for mass-produced nano-electronics: theoretical studies on mobility degradation by dislocation Hur, Ji-Hyun; Jeon, Sanghun, SCIENTIFIC REPORTS, v.6, 2016-02 | |
| Pulse I-V characterization of a nanocrystalline oxide device with sub-gap density of states Kim, Taeho; Hur, Ji-Hyun; Jeon, Sanghun, NANOTECHNOLOGY, v.27, no.21, 2016-05 | |
| Quantum Simulation Study on Performance Optimization of GaSb/InAs nanowire Tunneling FET Hur, Ji-Hyun; Jeon, Sanghun, JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.16, no.5, pp.630 - 634, 2016-10 | |
| Effect of hydrogen on dynamic charge transport in amorphous oxide thin film transistors Kim, Taeho; Nam, Yunyong; Hur, Ji-Hyun; Park, Sang-Hee Ko; Jeon, Sanghun, NANOTECHNOLOGY, v.27, no.32, 2016-08 |
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