| 1 | Enhancement of resistive switching properties in Al2O3 bilayer-based atomic switches: multilevel resistive switching Vishwanath, Sujaya Kumar; Woo, Hyunsuk; Jeon, Sanghun, NANOTECHNOLOGY, v.29, no.23, 2018-06 |
| 2 | Effect of dysprosium and lutetium metal buffer layers on the resistive switching characteristics of Cu-Sn alloy-based conductive-bridge random access memory Vishwanath, Sujaya Kumar; Woo, Hyunsuk; Jeon, Sanghun, NANOTECHNOLOGY, v.29, no.38, 2018-09 |
| 3 | Non-volatile resistive switching in CuBi-based conductive bridge random access memory device Vishwanath, Sujaya Kumar; Woo, Hyunsuk; Jeon, Sanghun, APPLIED PHYSICS LETTERS, v.112, no.25, 2018-06 |
| 4 | Resistive switching characteristics of a modified active electrode and Ti buffer layer in Cu-Se-based atomic switch Woo, Hyunsuk; Vishwanath, Sujaya Kumar; Jeon, Sanghun, JOURNAL OF ALLOYS AND COMPOUNDS, v.753, pp.551 - 557, 2018-07 |
| 5 | Excellent Resistive Switching Performance of Cu-Se-Based Atomic Switch Using Lanthanide Metal Nanolayer at the Cu-Se/Al2O3 Interface Woo, Hyunsuk; Vishwanath, Sujaya Kumar; Jeon, Sanghun, ACS APPLIED MATERIALS & INTERFACES, v.10, no.9, pp.8124 - 8131, 2018-03 |
