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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Probing temperature-dependent interlayer coupling in a MoS2/h-BN heterostructure Park, Hamin; Shin, Gwang Hyuk; Lee, Khang June; Choi, Sung-Yool, Nano Research, v.13, no.2, pp.576 - 582, 2020-02 | |
| Vertical-Tunneling Field-Effect Transistor Based on WSe2-MoS2 Heterostructure with Ion Gel Dielectric Jeon, Hyun Bae; Shin, Gwang Hyuk; Lee, Khang June; Choi, Sung-Yool, ADVANCED ELECTRONIC MATERIALS, v.6, no.7, pp.2000091, 2020-07 | |
| High-Performance Field-Effect Transistor and Logic Gates Based on GaS-MoS(2 )van der Waals Heterostructure Shin, Gwang Hyuk; Lee, Geon-Beom; An, Eun-Su; Park, Cheolmin; Jin, Hyeok Jun; Lee, Khang June; Oh, Dong-Sik; Kim, Jun-sung; Choi, Yang-Kyu; Choi, Sung-Yool, ACS APPLIED MATERIALS & INTERFACES, v.12, no.4, pp.5106 - 5112, 2020-01 | |
| Ultrasensitive Phototransistor Based on WSe2-MoS2 van der Waals Heterojunction Shin, Gwang Hyuk; Park, Cheolmin; Lee, Khang June; Jin, Hyeok Jun; Choi, Sung-Yool, NANO LETTERS, v.20, no.8, pp.5741 - 5748, 2020-08 |
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