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NO	Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1	Investigation of Self-Heating Effects in Gate-All-Around MOSFETs With Vertically Stacked Multiple Silicon Nanowire Channels Park, Jun-Young; Lee, Byung-Hyun; Chang, Ki Soo; Kim, Dong Uk; Jeong, Chanbae; Kim, Choong-Ki; Bae, Hagyoul; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.11, pp.4393 - 4399, 2017-11
2	Self-Curable Gate-All-Around MOSFETs Using Electrical Annealing to Repair Degradation Induced From Hot-Carrier Injection Park, Jun-Young; Moon, Dong-Il; Seol, Myeong-Lok; Kim, Choong-Ki; Jeon, Chang-Hoon; Bae, Hagyoul; Bang, Tewook; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.3, pp.910 - 915, 2016-03
3	Demonstration of a Curable Nanowire FinFET Using Punchthrough Current to Repair Hot-Carrier Damage Park, Jun-Young; Hur, Jae; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.39, no.2, pp.180 - 183, 2018-02
4	A Comparative Study on Hot-Carrier Injection in 5-story Vertically Integrated Inversion-Mode and Junctionless-Mode Gate-All-Around MOSFETs Kim, Seong-Yeon; Lee, Byung-Hyun; Hur, Jae; Park, Jun-Young; Jeon, Seung-Bae; Lee, Seung-Wook; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.39, no.1, pp.4 - 7, 2018-01
5	Curing of Hot-Carrier Induced Damage by Gate-Induced Drain Leakage Current in Gate-All-Around FETs Park, Jun-Young; Yun, Dae-Hwan; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.40, no.12, pp.1909 - 1912, 2019-12

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