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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Sensitivity of Threshold Voltage to Nanowire Width Variation in Junctionless Transistors Choi, Sung-Jin; Moon, Dong-Il; Kim, Sung-Ho; Duarte, Juan P.; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.32, no.2, pp.125 - 127, 2011-02 | |
| Vertically Integrated Unidirectional Biristor Moon, Dong-Il; Choi, Sung-Jin; Kim, Sung-Ho; Oh, Jae-Sub; Kim, Young-Su; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.32, no.11, pp.1483 - 1485, 2011-11 | |
| Nonvolatile memory with graphene oxide as a charge storage node in nanowire field-effect transistors Baek, David J.; Seol, Myeong-Lok; Choi, Sung-Jin; Moon, Dong-Il; Choi, Yang-Kyu, APPLIED PHYSICS LETTERS, v.100, no.9, 2012-02 | |
| High-Performance Polycrystalline Silicon TFT on the Structure of a Dopant-Segregated Schottky-Barrier Source/Drain Choi, Sung-Jin; Han, Jin-Woo; Kim, Sung-Ho; Moon, Dong-Il; Jang, Moon-Gyu; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.31, no.3, pp.228 - 230, 2010-03 | |
| Investigation of the source-side injection characteristic of a dopant-segregated Schottky barrier metal-oxide-semiconductor field-effect-transistor Kim, Sung-Ho; Choi, Sung-Jin; Jang, Moon-Gyu; Choi, Yang-Kyu, APPLIED PHYSICS LETTERS, v.95, no.6, 2009-08 | |
| Characterization of current injection mechanism in Schottky-barrier metal-oxide-semiconductor field-effect transistors Choi, Sung-Jin; Han, Jin-Woo; Jang, Moon-Gyu; Choi, Chel-Jong; Choi, Yang-Kyu, APPLIED PHYSICS LETTERS, v.95, no.8, 2009-08 | |
| An Optically Assisted Program Method for Capacitorless 1T-DRAM Moon, Dong-Il; Choi, Sung-Jin; Han, Jin-Woo; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.7, pp.1714 - 1718, 2010-07 |
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