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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Curing of Hot-Carrier Induced Damage by Gate-Induced Drain Leakage Current in Gate-All-Around FETs Park, Jun-Young; Yun, Dae-Hwan; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.40, no.12, pp.1909 - 1912, 2019-12 |