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NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
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Fin-Width Dependence of BJT-Based 1T-DRAM Implemented on FinFET Moon, Dong-Il; Choi, Sung-Jin; Han, Jin-Woo; Kim, Sung-Ho; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.31, no.9, pp.909 - 911, 2010-09 | |
A Universal Core Model for Multiple-Gate Field-Effect Transistors. Part I: Charge Model Duarte, Juan Pablo; Choi, Sung-Jin; Moon, Dong-Il; Ahn, Jae-Hyuk; Kim, Jee-Yeon; Kim, Sung-Ho; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.60, no.2, pp.840 - 847, 2013-02 | |
A Universal Core Model for Multiple-Gate Field-Effect Transistors. Part II: Drain Current Model Duarte, Juan Pablo; Choi, Sung-Jin; Moon, Dong-Il; Ahn, Jae-Hyuk; Kim, Jee-Yeon; Kim, Sung-Ho; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.60, no.2, pp.848 - 855, 2013-02 |
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