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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Electro-Thermal Erasing at 10(4)-Fold Faster Speeds in Charge-Trap Flash Memory Kim, Myung-Su; Ahn, Dae-Chul; Park, Jun-Young; Seo, Myungsoo; Kim, Seong-Yeon; Kim, Wu-Kang; Yun, Dae-Hwan; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.40, no.2, pp.196 - 199, 2019-02 | |
| Suppression of Self-Heating Effects in 3-D V-NAND Flash Memory Using a Plugged Pillar-Shaped Heat Sink Park, Jun-Young; Yun, Dae-Hwan; Kim, Seong-Yeon; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.40, no.2, pp.212 - 215, 2019-02 | |
| Curing of Hot-Carrier Induced Damage by Gate-Induced Drain Leakage Current in Gate-All-Around FETs Park, Jun-Young; Yun, Dae-Hwan; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.40, no.12, pp.1909 - 1912, 2019-12 | |
| Demonstration of Thermally-Assisted Programming with High Speed and Improved Reliability for Junctionless Nanowire NOR Flash Memory Yu, Ji-Man; Park, Jun-Young; Lee, Geon-Beom; Han, Joon-Kyu; Kim, Myung-Su; Hur, Jae; Yun, Dae-Hwan; Kim, Seong-Yeon; Choi, Yang-Kyu, IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.18, pp.1110 - 1113, 2019-10 |
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