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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Comprehensive Analysis of Gate-Induced Drain Leakage in Vertically Stacked Nanowire FETs: Inversion-Mode Versus Junctionless Mode Hur, Jae; Lee, Byung-Hyun; Kang, Min-Ho; Ahn, Dae-Chul; Bang, Tewook; Jeon, Seung-Bae; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.37, no.5, pp.541 - 544, 2016-05 | |
| Investigation of Low-Frequency Noise in Nonvolatile Memory Composed of a Gate-All-Around Junctionless Nanowire FET Jeong, Ui-Sik; Kim, Choong-Ki; Bae, Hagyoul; Moon, Dong-Il; Bang, Tewook; Choi, Ji-Min; Hur, Jae; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.5, pp.2210 - 2213, 2016-05 | |
| A Vertically Integrated Junctionless Nanowire Transistor Lee, Byung-Hyun; Hur, Jae; Kang, Min-Ho; Bang, Tewook; Ahn, Dae-Chul; Lee, Dongil; Kim, Kwang-Hee; Choi, Yang-Kyu, NANO LETTERS, v.16, no.3, pp.1840 - 1847, 2016-03 | |
| Self-Curable Gate-All-Around MOSFETs Using Electrical Annealing to Repair Degradation Induced From Hot-Carrier Injection Park, Jun-Young; Moon, Dong-Il; Seol, Myeong-Lok; Kim, Choong-Ki; Jeon, Chang-Hoon; Bae, Hagyoul; Bang, Tewook; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.3, pp.910 - 915, 2016-03 | |
| Local Electro-Thermal Annealing for Repair of Total Ionizing Dose-Induced Damage in Gate-All-Around MOSFETs Park, Jun-Young; Moon, Dong-Il; Bae, Hagyoul; Roh, Young Tak; Seol, Myeong-Lok; Lee, Byung-Hyun; Jeon, Chang-Hoon; Lee, Hee Chul; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.37, no.7, pp.843 - 846, 2016-07 | |
| Threshold Voltage Tuning Technique in Gate-All-Around MOSFETs by Utilizing Gate Electrode With Potential Distribution Park, Jun-Young; Bae, Hagyoul; Moon, Dong-Il; Jeon, Chang-Hoon; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.37, no.11, pp.1391 - 1394, 2016-11 |
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