Browse "EE-Journal Papers(저널논문)" by Subject workfunction
Showing results 1 to 4 of 4
| An integratable dual metal gate CMOS process using an ultrathin aluminum nitride buffer layer Park, CS; Cho, Byung Jin; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.24, no.5, pp.298 - 300, 2003-05 |
| Dopant-Segregated Schottky Source/Drain FinFET With a NiSi FUSI Gate and Reduced Leakage Current Choi, Sung-Jin; Han, Jin-Woo; Kim, Sung-Ho; Moon, Dong-Il; Jang, Moon-Gyu; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.11, pp.2902 - 2906, 2010-11 |
| Effect of Metal Nitride on Contact Resistivity of Metal-Interlayer-Ge Source/Drain in Sub-10-nm n-Type Ge FinFET Ahn, Juhan; Kim, Jeong-Kyu; Kim, Sun-Woo; Kim, Gwang-Sik; Shin, Changhwan; Kim, Jong-Kook; Cho, Byung-Jin; et al, IEEE ELECTRON DEVICE LETTERS, v.37, no.6, pp.705 - 708, 2016-06 |
| Workfunction-Tunable, N-Doped Reduced Graphene Transparent Electrodes for High-Performance Polymer Light-Emitting Diodes Hwang, Jin-Ok; Park, Ji-Sun; Choi, Dong-Sung; Kim, Ju-Young; Lee, Sun-Hwa; Lee, Kyung-Eun; Kim, Yong-Hyun; et al, ACS NANO, v.6, no.1, pp.159 - 167, 2012-01 |
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