Showing results 1 to 4 of 4
An Investigation of HZO-Based n/p-FeFET Operation Mechanism and Improved Device Performance by the Electron Detrapping Mode Kuk, Song-Hyeon; Han, Seung-Min; Kim, Bong Ho; Baek, Seung-Hyub; Han, Jae-Hoon; Kim, Sang-Hyeon, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.4, pp.2080 - 2087, 2022-04 |
Examination of Ferroelectric FET for "Cold" Nonvolatile Memory Kuk, Song-Hyeon; Han, Seung-Min; Kim, Bong Ho; Kim, Joon Pyo; Kim, Seong-Kwang; Ahn, Seung-Yeop; Park, Min Hyuk; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.8, pp.4122 - 4127, 2023-08 |
Logic and Memory Ferroelectric Field-Effect-Transistor Using Reversible and Irreversible Domain Wall Polarization Kuk, Songhyeon; Han, Seungmin; Lee, Dong Hyun; Kim, Bong Ho; Shim, Joonsup; Park, Min Hyuk; Han, Jae-Hoon; et al, IEEE ELECTRON DEVICE LETTERS, v.44, no.1, pp.36 - 39, 2023-01 |
Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems Song, Min-Kyu; Kang, Ji-Hoon; Zhang, Xinyuan; Ji, Wonjae; Ascoli, Alon; Messaris, Ioannis; Demirkol, Ahmet Samil; et al, ACS NANO, v.17, no.13, pp.11994 - 12039, 2023-07 |
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