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Design consideration of ferroelectric field-effect-transistors with metal-ferroelectric-metal capacitor for ternary content addressable memory Yi, Boram; Hwang, Junghyeon; Oh, Tae Woo; Jeon, Sanghun; Jung, Seong-Ook; Yang, Ji-Woon, SOLID-STATE ELECTRONICS, v.206, 2023-08 |
NANDFlashSim: High-Fidelity, Microarchitecture-Aware NAND Flash Memory Simulation Jung, Myoungsoo; Choi, Wonil; Gao, Shuwen; Wilson, Ellis Herbert, III; Donofrio, David; Shalf, John; Kandemir, Mahmut Taylan, ACM TRANSACTIONS ON STORAGE, v.12, no.2, 2016-02 |
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