Browse "EE-Journal Papers(저널논문)" by Subject NVM
Showing results 1 to 5 of 5
| Energy-Band-Engineered Unified-RAM (URAM) Cell on Buried Si1-yCy Substrate for Multifunctioning Flash Memory and 1T-DRAM Han, Jin-Woo; Ryu, Seong-Wan; Kim, Chung-Jin; Choi, Sung-Jin; Kim, Sung-Ho; Ahn, Jae-Hyuk; Kim, Dong-Hyun; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.4, pp.641 - 647, 2009-04 |
| Evolution of Unified-RAM: 1T-DRAM and BE-SONOS Built on a Highly Scaled Vertical Channel Moon, Dong-Il; Kim, Jee Yeon; Moon, Joon-Bae; Kim, Dong-Oh; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.1, pp.60 - 65, 2014-01 |
| Polysilicon Channel TFT With Separated Double-Gate for Unified RAM (URAM)Unified Function for Nonvolatile SONOS Flash and High-Speed Capacitorless 1T-DRAM Han, Jin-Woo; Ryu, Seong-Wan; Kim, Dong-Hyun; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.3, pp.601 - 607, 2010-03 |
| Resistive-Memory Embedded Unified RAM (R-URAM) Kim, Sung-Ho; Choi, Sung-Jin; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.11, pp.2670 - 2674, 2009-11 |
| Vertically Integrated Nanowire-Based Unified Memory Lee, Byung-Hyun; Ahn, Dae-Chul; Kang, Min-Ho; Jeon, Seung-Bae; Choi, Yang-Kyu, NANO LETTERS, v.16, no.9, pp.5909 - 5916, 2016-09 |
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