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Effects of thermal stress on the performance of benzocyclobutene-passivated In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors Yoon, M; Kim, T; Kim, D; Yang, Kyounghoon, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.43, pp.1910 - 1913, 2004-04 |
High Performance RFIPDs on Thick Oxide Substrate using Cu-BCB Process inho jeong; ki-joong kim; tong-ook kong; jun-seok kim; hyung-kyu choi; choong-mo nam; dong-wook kim; et al, MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, v.37, no.1, pp.49 - 52, 2003-04 |
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