Browse "EE-Journal Papers(저널논문)" by Author Xu, Z

Showing results 1 to 3 of 3

1
Annealing behavior of gate oxide leakage current after quasi-breakdown

Xu, Z; Cho, Byung Jin; Li, MF, MICROELECTRONICS RELIABILITY, v.40, pp.1341 - 1346, 2000-10

2
Effect of substrate hot-carrier injection on quasibreakdown of ultrathin gate oxide

Cho, Byung Jin; Xu, Z; Guan, H; Li, MF, JOURNAL OF APPLIED PHYSICS, v.86, no.11, pp.6590 - 6592, 1999-12

3
Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide

Guan, H; Cho, Byung Jin; Li, MF; Xu, Z; He, YD; Dong, Z, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.48, no.5, pp.1010 - 1013, 2001-05

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