Browse "EE-Journal Papers(저널논문)" by Author Ha, DW
Showing results 1 to 5 of 5
| Extremely scaled silicon nano-CMOS devices Chang, LL; Choi, Yang-Kyu; Ha, DW; Ranade, P; Xiong, SY; Bokor, J; Hu, CM; et al, PROCEEDINGS OF THE IEEE, v.91, no.11, pp.1860 - 1873, 2003-11 |
| Hydrogen annealing effect on DC and low-frequency noise characteristics in CMOS FinFETs Lee, JS; Choi, Yang-Kyu; Ha, DW; Balasubramanian, S; King, TJ; Bokor, J, IEEE ELECTRON DEVICE LETTERS, v.24, no.3, pp.186 - 188, 2003-03 |
| Low-frequency noise characteristics of ultrathin body p-MOSFETs with molybdenum gate Lee, JS; Ha, DW; Choi, Yang-Kyu; King, TJ; Bokor, J, IEEE ELECTRON DEVICE LETTERS, v.24, no.1, pp.31 - 33, 2003-01 |
| Molybdenum gate work function engineering for ultra-thin-body silicon-on-insulator (UTB SOI) MOSFETs Ha, DW; Ranade, P; Choi, Yang-Kyu; Lee, JS; King, TJ; Hu, CM, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.42, no.4B, pp.1979 - 1982, 2003-04 |
| Nanoscale ultrathin body PMOSFETs with raised selective germanium source/drain Choi, Yang-Kyu; Ha, DW; King, TJ; Hu, CM, IEEE ELECTRON DEVICE LETTERS, v.22, no.9, pp.447 - 448, 2001-09 |
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