Showing results 1 to 5 of 5
Engineering of Voltage Nonlinearity in High-K MIM Capacitor for Analog/Mixed-Signal ICs Cho, Byung Jin; Kim, SJ; Li, MF; Ding, SJ; Yu, MB; Zhu, C; Chin, A; et al, Symposium on VLSI Technology, pp.218 - 219, 2004-06-17 |
Hafnium-oxide-based high-K metal-insulator-metal capacitors (MIMCAPs) for RF/analog CMOS technologies Cho, Byung Jin; Kim, SJ; Li, MF; Yu, MB, 2004 Asia-Pacific Microwave Conference, pp.0 - 0, 2004-11-15 |
High Capacitance Density (>17fF/um2) Nb2O5-based MIM capacitors for Future RF IC Application Cho, Byung Jin; Kim, SJ; Yu, MB; Li, MF; Xiong, YZ; Zhu, C; Chin, A, Symposium on VLSI Technology, pp.56 - 57, 2005-06-14 |
Integration of Tensile-Strained Ge p-i-n Photodetector on Advanced CMOS Platform Cho, Byung Jin; Wang, J; Loh, WY; Zang, H; Yu, MB; Chua, KT; Loh, TH, 4th International Conference on Group IV Photonics, pp.0 - 0, 2007-09-19 |
Niobium oxide (Nb2O5) as a high-K dielectric for RF IC application Cho, Byung Jin; Kim, SJ; Li, MF; Zhu, C; Chin, A; Yu, MB; Xiong, YZ, 3rd International Conference on Materials for Advanced Technologies, pp.10 - 10, 2005-07-03 |
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