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Showing results 1 to 8 of 8

1
240GHz fmax InP/InGaAs Single HBT fabrication and modeling

Song, Y; Kim, T; Yoon, M; 양경훈, Korean Conference On Semiconductors, pp.21 - 22, 2002

2
A New Submicron Gate Patterning Technique for InP MESFETs Using Crystallographical Etching Characteristics

Yoon, M; Yang, Kyounghoon, MINT Millimeter-wave International Symposium, pp.25 - 28, 2003

3
Fabrication of Edge-Illuminated Refracting Facet Photodiodes with on-chip V-grooves

Lee, B; Yoon, M; 양경훈, Korean Conference On Semiconductors, pp.51 - 52, 2003

4
Fabrication of High fmax InP DHBTs Using a New Wet Etching Method

Jeong, Y; Song, Y; Choi, S; Yoon, M; 양경훈, Korean Conference On Semiconductors, pp.347 - 348, 2003

5
Fabrication of novel self-aligned InP/InGaAs HBT''s using dummy emitter

Kim, M; Jeon, S; Yoon, M; Yang, Kyounghoon; Kwon, Young Se, Conference on Optoelectronic and Microelectronic Materials and Devices, pp.123, Conference on Optoelectronic and Microelectronic Materials and Devices, 2000-12-06

6
Fabrication of sub-micron Y-gate InP MESFETs using crystallographically defined contact technology

Yoon, M; Yang, Kyounghoon, Int. Conf. on Solid State Devices and Materials, pp.134 - 135, 2002

7
Observation of Thermal Reliability of BCB Passivated InAlAs/InGaAs HEMTs

Yoon, M; Kim, T; Kim, D; Yang, Kyounghoon, Int. Conf. on Solid State Devices and Materials, pp.122 - 123, 2003-09-16

8
Reliability of BCB Passivated InAlAs/InGaAs HEMTs Under Thermal Stress

Kim, D; Yoon, M; Kim, T; Yang, Kyounghoon, IEEE, International Symposium on Compound Semiconductors, pp.231 - 232, IEEE, 2003

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