Showing results 1 to 41 of 41
240GHz fmax InP/InGaAs Single HBT fabrication and modeling Song, Y; Kim, T; Yoon, M; 양경훈, Korean Conference On Semiconductors, pp.21 - 22, 2002 |
5 GHz Low-Power RTD-Based Amplifier MMIC With a High Figure-Of-Merit of 24.5 dB/mW 이종원; 이주석; 박재홍; 양경훈, 25th International Conference on Indium Phosphide and Related Materials, International Conference on Indium Phosphide and Related Materials, 2013-05-19 |
A 40Gb/s Low DC-power 2:1 Multiplexer IC using a Monolithic quantum-effect device technology Choi, S; Jeong,Y; Lee, J; 양경훈, Korean Conference on Semiconductors, pp.26 - 27, 2009 |
A 45 mW RTD/HBT MOBILE D-Flip Flop IC Operating up to 26 Gb/s Kim, T; Jeong,Y; 양경훈, Korean Conference on Semiconductors, pp.703 - 704, 2006 |
A Low Power RTD/HBT Non-return-to-Zero (NRZ) D-type Flip Flop ICs using a CML-type MOBILE Scheme Kim, T; Lee, B; Choi, S; 양경훈, Korean Conference on Semiconductors, pp.193 - 194, 2005 |
ASOPS와 광학계 기반의 THz 분광-영상 시스템의 특성 강광용; 백문철; 하재권; 이승철; 강진섭; 양경훈, 한국전자파학회 하계종합학술대회, pp.1 - 1, 한국전자파학회, 2019-08-23 |
Calculation of Random Offset Deviation in Rail-to-Rail Buffer Using Transistor Threshold Mismatch for Display Driver ICs Song, Y; 양경훈, Korean Conference on Semiconductors, pp.261 - 262, 2005 |
Compact InP/InGaAs PIN SPDT/SP3T Switches using BCB-based 3-D MMIC Technology Yang, JG; Choi, S; Eom, H; 양경훈, Korean Conference on Semiconductors, pp.317 - 318, 2008 |
Design and implementation of a Ka-band 4-bit MMIC phase shifter using an InP-based PIN diode Yang, JG; Kim, M; 양경훈, 감시정찰정보학술대회, pp.114 - 114, 2009 |
Design and Implementation of a Ku-band 5bit MMIC Phase Shifter using InGaAs PIN Diodes Yang, JG; 양경훈, Korean Conference on Semiconductors, pp.22 - 23, 2009 |
Design and simulation of 20 Gbps-level MOBILE based on an RTD-HEMT Technology Kim,T; 양경훈, Korean Conference On Semiconductors, pp.469 - 470, 2003 |
Design of a New Pinned Photodiode Structure for High Sensitivity CMOS Image Sensors Lee, S; 양경훈, Korean Conference On Semiconductors, pp.69 - 70, 2006 |
Development of Self-Aligned RTDs using a SiNx Sidewall Process Lee, H; Lee, J; 양경훈, Korean Conference on Semiconductors, pp.564 - 565, 2010 |
Dynamic Range Enhancement of a Self-adaptive APS with Pulsed Photogate Bias Cho, C; Lee, J; Baek, I; 양경훈, Korean Conference on Semiconductors, pp.606 - 607, Korean Conference on Semiconductors, 2010 |
Enhanced breakdown characteristics of AlGaN/GaN HEMTs using a gate/drain field-plate structure Kim,; 양경훈, Korean Conference on Semiconductors, pp.447 - 448, 2006 |
Fabrication and characterization of AlAs/InGaAs/InAs Resonant Tunneling Diodes 홍성철; 김형태; 최성순; 김석진; 송생섭; 양경훈; 서광석, Korean Conference On Semiconductors, pp.341 - 342, 2003-02-27 |
Fabrication of Edge-Illuminated Refracting Facet Photodiodes with on-chip V-grooves Lee, B; Yoon, M; 양경훈, Korean Conference On Semiconductors, pp.51 - 52, 2003 |
Fabrication of GaAs-based Heterosturcture-MOS RF Switch Devices Using an LPCEO Technology Kim, S; 양경훈, Korean Conference on Semiconductors, pp.469 - 470, 2006 |
Fabrication of High fmax InP DHBTs Using a New Wet Etching Method Jeong, Y; Song, Y; Choi, S; Yoon, M; 양경훈, Korean Conference On Semiconductors, pp.347 - 348, 2003 |
Fabrication of Near Infrared Planar Geiger-mode Avalanche Photodiodes using a Single Diffusion Process 이기원; 양경훈, 19th 한국 반도체 학술대회, 한국 반도체 학술대회, 2012-02 |
Fixed Pattern Noise Correction for a Linear-Logarithmic CMOS Image Sensor using a Correction Constant 양동주; 이지원; 백인규; 양경훈, 20th 한국 반도체 학술대회, 한국 반도체 학술대회, 2013-02-06 |
GaAs 산화막 형성 기술을 이용한 새로운 GaAs MMIC MOS Varactor 김성연; 양경훈, 한국군사과학기술학회 2004년 종합학술대회 및 정기총회, pp.517 - 519, 한국군사과학기술학회, 2004 |
HBT 및 IC 설계 및 제작기술 양경훈, 무선통신용MMIC및 Module Workshop, pp.167 - 201, 1999 |
High performance mmW-band MMIC phase shifters using InP-based PIN diodes with a high-cutoff Kim, M; Yang, JG; 양경훈, 2009 Spring Conference on Microwave and Wave Propagation, pp.103 - 103, 2009 |
High-speed digital/analog ICs using a Monolithic quantum-effect heterojunction device technology Choi, S; Lee, B; Kim, T; 양경훈, Korean Conference on Semiconductors, pp.189 - 190, 2005 |
InP HBT Technology based on new crystallographical etching characteristics 양경훈, ISRC Workshop, Compound Semiconductor Materials and Devices, pp.1 - 10, 2003 |
InP HBT technology for Micro/mm-Wave Applications 양경훈, 무선통신용MMIC및 Module Workshop 2000, pp.231 - 242, 2000 |
InP 기반 PIN MMIC 기술을 이용한 밀리미터파 대역레이더 시스템용 제어 회로 개발 Yang, JG; 양경훈, 군수용초고주파부품워크샵, pp.240 - 240, 2009 |
InP-based device & IC technology for high frequency microelectronics 양경훈; Kim, T.; Yoon, M.; Kim,M.; Song, Y.; Lee, B., 2000 Fall Conference, Korea Institute of Military Science & technology, pp.181 - 186, 2000 |
K/Ka/Q-band 4-bit Digital Attenuator using a T-type Resistive Network Yang, JG; 양경훈, Korean Conference on Semiconductors, pp.552 - 553, 2010 |
Ku-band differential RTD/HBT VCO with ultra low DC-power Consumption Choi, S; Jeong, Y; 양경훈, Korean Conference on Semiconductors, pp.455 - 456, 2006 |
Ku-band Multi-layer 3-bit Digital Attenuator MMIC using InP/InGaAs PIN Diodes Eom, H; Yang, JG; Choi, S; 양경훈, Korean Conference on Semiconductors, pp.918 - 919, 2008 |
New High-Sensitivity Logarithmic Response CMOS Active Pixel Sensor using a GIDL Mechanism 백인규; 이지원; 양경훈, 19th 한국 반도체 학술대회, 한국 반도체 학술대회, 2012-02 |
Performance of a Planar InGaAs/InP Avalanche Photodiode using a Single Diffusion Process in Geiger-Mode Operation 이기원; 양경훈, 20th 한국 반도체 학술대회, 한국 반도체 학술대회, 2013-02-05 |
Reset level Boosting in Self-adaptive CMOS Active Pixel Sensor for a Wide Output Voltage Swing at Low Voltage Operation Lee, J; Cho, Ch; Baek, I; 양경훈, Korean Conference on Semiconductors, pp.54 - 55, 2009 |
Sub-THz 대역 무선응용을 위한 InP 쇼트키 장벽 다이오드와 집적된 RTD 쌍구조 기반 주파수 가변 발진기 개발 이기원; 양경훈; 강광용, 한국전자파학회 하계종합학술대회, 한국전자파학회 하계종합학술대회, 2020-08-20 |
Suppression of Random Offset Deviation in a Rail-to-Rail Buffer Amplifier for Display Driver ICs Under Transistor Threshold Mismatch Song,Y; 양경훈, Korean Conference on Semiconductors, pp.77 - 78, 2006 |
THz 통신 시스템에 대한 비트오류율(Bit error rate) 측정 강광용; 백문철; 하재권; 강진섭; 양경훈, 한국전자파학회 하계종합학술대회, pp.1 - 1, 한국전자파학회, 2019-08-23 |
다층구조의 마이크로스트립 라인을 이용한 새로운 저 면적 3차원 하이브리드 커플러 양정길; 정용식; 최선규; 양경훈, 2006 Fall Conference, Korea Institute of Military Science & Technology, pp.158 - 161, 2006 |
새로운 Inner Field-plate 구조를 이용한 고전력 AlGaN/GaN HEMTs의 향상된 DC와 RF 성능 이기원; 고광의; 이성식; 양경훈, 2006, Fall Conference, Korea Institute of Military Science & Technology, pp.155 - 157, 2006 |
테라헤르츠(THz)파 전송속도 측정에서 RF-케이블의 영향 강광용; 백문철; 하재권; 강진섭; 이기원; 양경훈, 한국전자파학회 추계학술대회, pp.1 - 1, 한국전자파학회, 2019-11-22 |
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