Characterization of impurity profile in silicon실리콘에서 불순물 분포의 산출
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | Kyung, Chong-Min | - |
| dc.contributor.advisor | 경종민 | - |
| dc.contributor.author | Yang, Yeong-Yil | - |
| dc.contributor.author | 양영일 | - |
| dc.date.accessioned | 2011-12-14T02:22:56Z | - |
| dc.date.available | 2011-12-14T02:22:56Z | - |
| dc.date.issued | 1985 | - |
| dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=64660&flag=dissertation | - |
| dc.identifier.uri | http://hdl.handle.net/10203/39719 | - |
| dc.description | 학위논문(석사) - 한국과학기술원 : 전기 및 전자공학과, 1985.2, [ [ii], 61 p. ] | - |
| dc.description.abstract | A program (PRECISE) was written to calculate the two-dimensional impurity profile in silicon owing to the fabrication processes such as diffusion and ion-implantation, which facilitates the rapid prediction of the 2-D impurity profile near the mask edge or the bird``s beak during the local oxidation process. In addition, the one dimensional simulator DIFSIM was modified to include the model for ion implantation, emitter dip effect and the arsenic diffusion, which agrees fairly well with the experimental data. | eng |
| dc.language | eng | - |
| dc.publisher | 한국과학기술원 | - |
| dc.title | Characterization of impurity profile in silicon | - |
| dc.title.alternative | 실리콘에서 불순물 분포의 산출 | - |
| dc.type | Thesis(Master) | - |
| dc.identifier.CNRN | 64660/325007 | - |
| dc.description.department | 한국과학기술원 : 전기 및 전자공학과, | - |
| dc.identifier.uid | 000831224 | - |
| dc.contributor.localauthor | Kyung, Chong-Min | - |
| dc.contributor.localauthor | 경종민 | - |
- Appears in Collection
- EE-Theses_Master(석사논문)
- Files in This Item
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.