Fabrication of 1.3 μm GaInAsP /InP DH stripe-geometry laser diodes

Abstract

1.3um GaInAsP/InP DH stripe-geometry laser diodes are fabricated by L.P.E. (Liquid Phase Epitaxy) technique. L.P.E. system was newly constructed for the growth of quaternary epitaxial layers. The lattice-matched GaInAsP epitaxial layer was successfully grown on an InP substrate. The misfit of hetero-epitaxial layers, Δa/a, was less than 0.05%. The surface of grown layers was flat and featureless. Four layers including GaInAsP (λ=1.3um) layer were grown for the fabrication of laser diodes. The thickness of active layer was 0.9um. The width of stripes was 10-30um. Under the pulsed operation, threshold current, Ith, and the normalized threshold current density, $J_{th}/d$, were 700mA and 7KA/㎠/um, respectively.