DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Kyung, Chong-Min | - |
dc.contributor.advisor | 경종민 | - |
dc.contributor.author | Oh, Hyeong-Cheol | - |
dc.contributor.author | 오형철 | - |
dc.date.accessioned | 2011-12-14T02:22:07Z | - |
dc.date.available | 2011-12-14T02:22:07Z | - |
dc.date.issued | 1984 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=64158&flag=dissertation | - |
dc.identifier.uri | http://hdl.handle.net/10203/39664 | - |
dc.description | 학위논문(석사) - 한국과학기술원 : 전기 및 전자공학과, 1984.2, [ ii, 88 p. ; ] | - |
dc.description.abstract | A computer program (DIFSIM : DIFfusion SIMulator) was written to calculate the impurity profile, specifically boron and phosphorus, due to three different diffusion processes-predeposition, drive-in in inert ambient, and drive-in in oxidizing ambient. The vacancy mechanism including Fair and Tsai``s theory for phosphorus diffusion was widely incorporated for modelling various diffusion processes. The concentration-dependent oxidation rate was also explained using the vacancy model, while the oxidation-enhanced diffusion was modelled using Watkins replacement mechanism. The simulation results using DIFSIM show a fairly good agreement with the experimental data, by adjusting some of the empirical parameters in the program. The results obtained using DIFSIM was also compared with SUPREM II, version 0-05, the mostly being-used process simulator. | eng |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.title | Characterization of one-dimensional impurity profile in silicon using iterative parabolic solver | - |
dc.title.alternative | 수치해석 프로그램을 이용한 실리콘에서의 일차원적 불순물 분포의 산출 | - |
dc.type | Thesis(Master) | - |
dc.identifier.CNRN | 64158/325007 | - |
dc.description.department | 한국과학기술원 : 전기 및 전자공학과, | - |
dc.identifier.uid | 000821183 | - |
dc.contributor.localauthor | Kyung, Chong-Min | - |
dc.contributor.localauthor | 경종민 | - |
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