Measurement of implantation profile by MOS C-V characteristic

Abstract

Semiconductor water 에서 impurity concentration Density 를 Mos eapaciter 의 C-V 특성을 이용하여 측정했다. 이것은 Ion Implanuation 에 의해서 생긴 Impurity density profile 이나 surface 가까운 부분의 impurity density 의 측정에 적합하여 TOTAL ERROR 도 15\% 이내로 가능하다. 측정범위는 Inversion 되기까지의 depletion width 로 제약받는다. 간단하면서 정확도가 높아 실용성이 좋다. Impurity concentration density in semiconductor is measured by C-V characteristic of MOS capacistor. This technique is suitable for measureing impurity density distributed by Ion implantation and that near the surface. It is possible that overall error is within 15\%. Strong inversion ristricts maximum range to be measured. Deep depletion technique can be extended maximum measuring range. this technique is simple but good accuracy and so suitable for application in laboratory and industry.