DC Field | Value | Language |
---|---|---|
dc.contributor.author | Baek, JT | ko |
dc.contributor.author | Chung, SH | ko |
dc.contributor.author | Kang, SW | ko |
dc.contributor.author | Ahn, Byung Tae | ko |
dc.contributor.author | Yoo, Hyung Joun | ko |
dc.date.accessioned | 2008-04-17T06:15:35Z | - |
dc.date.available | 2008-04-17T06:15:35Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1997-03 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.36, no.3B, pp.1642 - 1645 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/3941 | - |
dc.description.abstract | A new antifuse with metal/dielectric/poly-Si/dielectric/metal structure has been developed for use in FPGAs as a voltage programmable Link. This structure has two thermally grown dielectrics with an 8.5 nm thickness and a boron-doped poly-Si pad. Low programmed on-state resistance of similar to 20 Omega was achieved by the formation of Al-Si metal alloy link in the doped poly-Si pad. The metal link was formed by the diffusion of Al from the positive electrode into poly-Si. The dielectric property of this antifuse might be reliable because of no hillocks on the bottom electrode and no interaction between the thermally grown SiO2 and the bottom electrode. | - |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | JAPAN J APPLIED PHYSICS | - |
dc.subject | METAL STRUCTURE | - |
dc.title | A new low-resistance antifuse with planar metal/dielectric/poly-Si/dielectric/metal structure | - |
dc.type | Article | - |
dc.identifier.wosid | A1997WT45700067 | - |
dc.identifier.scopusid | 2-s2.0-3743093805 | - |
dc.type.rims | ART | - |
dc.citation.volume | 36 | - |
dc.citation.issue | 3B | - |
dc.citation.beginningpage | 1642 | - |
dc.citation.endingpage | 1645 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Kang, SW | - |
dc.contributor.localauthor | Ahn, Byung Tae | - |
dc.contributor.localauthor | Yoo, Hyung Joun | - |
dc.contributor.nonIdAuthor | Baek, JT | - |
dc.contributor.nonIdAuthor | Chung, SH | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | antifuse | - |
dc.subject.keywordAuthor | FPGAs | - |
dc.subject.keywordAuthor | dielectrics | - |
dc.subject.keywordAuthor | Al-Si alloy link | - |
dc.subject.keywordAuthor | poly-Si pad | - |
dc.subject.keywordAuthor | on-state resistance | - |
dc.subject.keywordAuthor | no hillocks | - |
dc.subject.keywordAuthor | no interaction | - |
dc.subject.keywordPlus | METAL STRUCTURE | - |
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