Development of PECVD system using ECR plasma

Abstract

A plasma enhanced chemical vapor deposition (PECVD) system suitable for deposition of good quality film without substrate heating, which uses microwave and static magnetic field to enhance plasma density through the electron cyclotron resonance (ECR), is successfully developed. The ECR plasma is characterized by Langmuir probe method for different pressure and magnetic field profile. Silicon nitrite films are grown without substrate heating and characterized by an ellipsometer and etching rate. Process parameters such as magnetic field profile, the flow rate of the gases and pressure are varied to find the optimum condition for the deposition. The results demonstrate the possibility of good quality silicon nitrite film deposition at low temperature with further improvement of the vacuum system.