Design, fabrication, and operation of 16×16 CCD area image sensor using overlapping double polysilicon gate

Abstract

A charge-coupled image sensor of the vertical frame transfer organization has been implemented with two phase overlapped n-type polysilicon gates. The device has 16 vertically interlaced rows of elements and 16 resolution elements per line. The total imaging setup consisting of optical microscope, clock generators and clock drivers, staircase signal generators, and oscilloscope was easily achieved with the aid of PROM. The operation of the two dimensional image sensors was successful with proper operating frequency of 100 kHz, clock voltage from 0 V to 8 V, and dark current density of 100 nA/㎠ . The alphabet was displayed in this imaging setup as the sample pattern.