Fabrication and characterization of mmW-band InP/InGaAs PIN phase shifters using a developed BCB-based multi-layer technology = BCB 기반 다층구조를 이용한 밀리미터파 대역 InP/InGaAs PIN phase shifter의 제작 및 특성 분석

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 286
  • Download : 0
In this thesis, InP/InGaAs PIN diode-based single-bit/4-bit phase shifters operating at a millimeter-wave band have been proposed and demonstrated, which are implemented by using the III-V semiconductor fabrication facilities at KAIST. In recent years, there have been growing interests in the development of high-frequency switching devices for the wide range of wireless communication applications. Among various kinds of them, PIN diodes are key components which obtain the switching and the variable resistance functions. PIN diodes have lower $R_{on}$ and $C_{off}$ than those of HEMTs. Especially, InP/InGaAs PIN diodes have the material-related excellent properties such as high electron mobility, low turn-on voltage, and high cutoff-frequency. Because of these characteristics, low insertion loss and high isolation can be achieved up to a millimeter-wave band. Since these are the required performances for the high-frequency switching functions, PIN diodes are widely used in RF and millimeter-wave ICs such as switches, phase shifters, and attenuators. In this work, InP/InGaAs PIN diodes and passive devices including MIM capacitors, spiral inductors, and TFMS (Thin Film MicroStrip-line) have been fabricated and characterized. Based on the equivalent circuits, the modeling information of each device was obtained up to 50 GHz for the simulation of phase shifters. The fabricated InP/InGaAs PIN diode showed 1.6 Ω of on-resistance and 19 fF of off-capacitance corresponding to the switching cutoff-frequency of 5.23 THz. A 2,000 $\AA$ of SiNx dielectric layer was deposited to make MIM capacitors with a capacitance value of $240 pF/mm^2$. A 20,000 $\AA$ of top metal was evaporated to form spiral inductors. A top metal, a dielectric layer and the bottom-ground plane form the microstrip-line. A 6 μm of the distance between the top metal and the ground-plane as well as a 15.4 μm of the width enable the microstrip-line to maintain the characteristic impedance of 50 Ω. Ne...
Yang, Kyoung-Hoonresearcher양경훈researcher
한국과학기술원 : 전기및전자공학전공,
Issue Date
327331/325007  / 020074120

학위논문(석사) - 한국과학기술원 : 전기및전자공학전공, 2009. 8., [ x, 70 p. ]


phase shifter; BCB; InGaAs; 위상변위기; BCB; InGaAs; phase shifter; BCB; InGaAs; 위상변위기; BCB; InGaAs

Appears in Collection
Files in This Item
There are no files associated with this item.


  • mendeley


rss_1.0 rss_2.0 atom_1.0