Fabrication and electrical properties of graphene field-ffect Device그래핀 전계 효과 소자의 제작 및 전기적 특성 분석
Graphene is a single layer of sp2-bonded carbon atoms arranged in a honeycomb lattice, which shows unique electronic properties. Graphene channel field-effect devices are fabricated by using silicon dioxide/silicon wafers as a global back gate. An optimized silicon dioxide thickness is found and an aluminum oxide interlayer is applied to improve graphene-substrate adhesion. Effect of vacuum annealing on device performance has been investigated.
- Advisors
- Cho, Byung-Jinresearcher; 조병진researcher
- Description
- 한국과학기술원 : 전기및전자공학전공,
- Publisher
- 한국과학기술원
- Issue Date
- 2009
- Identifier
- 327327/325007 / 020074088
- Language
- eng
- Description
학위논문(석사) - 한국과학기술원 : 전기및전자공학전공, 2009. 8., [ v, 49 p. ]
- Keywords
Graphene; Field-effect device; Carrier mobility; 그래핀; 전계효과소자; 전하 이동도; Graphene; Field-effect device; Carrier mobility; 그래핀; 전계효과소자; 전하 이동도
- Appears in Collection
- EE-Theses_Master(석사논문)
- Files in This Item
- There are no files associated with this item.
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