DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Lee, Hee-Chul | - |
dc.contributor.advisor | 이희철 | - |
dc.contributor.author | Shin, Yun-Sang | - |
dc.contributor.author | 신윤상 | - |
dc.date.accessioned | 2011-12-14T02:04:57Z | - |
dc.date.available | 2011-12-14T02:04:57Z | - |
dc.date.issued | 2007 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=268866&flag=dissertation | - |
dc.identifier.uri | http://hdl.handle.net/10203/38520 | - |
dc.description | 학위논문(석사) - 한국과학기술원 : 전기및전자공학전공, 2007. 8, [ 40 p. ] | - |
dc.description.abstract | In this thesis, Post Deposition Anneal (PDA) effect of HfO2 thin film deposited by Atomic Layer Deposition (ALD) method has been investigated. With optimized PDA conditions (N2, 400℃, 30min), leakage current density is decreased by 67% at VG=-2V and hysteresis is also decreased, maintaining accumulation capacitance value. Furthermore, from the Capacitance-Voltage(C-V) curve, it can be inferred that interface trapped charge density is additionally reduced. In high temperature (N2, 600℃, 30min) PDA, drastic increase of leakage current density was observed. With x-ray diffraction (XRD) result, HfO2 crystallization is a possible cause of increasing leakage current density. It was found that a major phase of crystallized HfO2 at 600℃ is monoclinic. Leakage current mechanism of optimized PDA conditions is also suggested. At low electric field, Schottky emission is dominated and at high electric field, Poole-Frenkel conduction is fitted well. Both cases, extracted dielectric constant are well matched with the one which is calculated by capacitance value. | eng |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | Post Deposition Anneal(PDA) | - |
dc.subject | Atomic Layer Deposition(ALD) | - |
dc.subject | 증착 후 열처리 | - |
dc.subject | 원자층 증착법 | - |
dc.subject | Post Deposition Anneal(PDA) | - |
dc.subject | Atomic Layer Deposition(ALD) | - |
dc.subject | 증착 후 열처리 | - |
dc.subject | 원자층 증착법 | - |
dc.title | Post deposition anneal effect of $HfO_2$ thin film deposited by atomic layer deposition method | - |
dc.title.alternative | 원자층 증착법으로 증착된 $HfO_2$ 박막의 증착 후 열처리 효과에 관한 연구 | - |
dc.type | Thesis(Master) | - |
dc.identifier.CNRN | 268866/325007 | - |
dc.description.department | 한국과학기술원 : 전기및전자공학전공, | - |
dc.identifier.uid | 020053299 | - |
dc.contributor.localauthor | Lee, Hee-Chul | - |
dc.contributor.localauthor | 이희철 | - |
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