Self-aligned emitter-base contact과 base pad isolation을 이용한 초고주파용 InP/InGaAs HBT제작Fabrication of high-frequency InP/InGaAs HBTs using self-aligned emitter-base contact and base pad isolation

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Advisors
양경훈researcherYang, Kyoung-Hoonresearcher
Description
한국과학기술원 : 전기및전자공학전공,
Publisher
한국과학기술원
Issue Date
2002
Identifier
174116/325007 / 000993292
Language
kor
Description

학위논문(석사) - 한국과학기술원 : 전기및전자공학전공, 2002.2, [ 77 p. ]

Keywords

베이스-콜렉터 커패시턴스; 자기 정렬 전극; 이종접합 바이폴라 트랜지스터; 베이스 패드; base pad isolation; extrinsic base-collector capacitance; self-aligned emitter-base contact; Heterojunction Bipolar Transistors(HBTs)

URI
http://hdl.handle.net/10203/37586
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=174116&flag=dissertation
Appears in Collection
EE-Theses_Master(석사논문)
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