(A) study on substrate resistance of RF MOSFETs

Abstract

Recent RF MOSFET models include substrate resistance because it affects the small-signal output characteristics of MOSFETs at high frequencies. However, there has been no report for simple extraction method of substrate resistance. In this paper, a simple and accurate method for extracting substrate resistance of an RF MOSFET is proposed. The extraction results from the measured network parameters are presented for various bias conditions and devices with different geometries.