MOCVD를 이용한 다공성 실리콘 기판위에 갈륨비소 박막 증착에 관한 연구Research on MOCVD growth of GaAs on porous Si substrate
- Advisors
- 권영세researcher; Kwon, Young-Seresearcher
- Description
- 한국과학기술원 : 전기및전자공학전공,
- Publisher
- 한국과학기술원
- Issue Date
- 2002
- Identifier
- 174068/325007 / 020003006
- Language
- kor
- Description
학위논문(석사) - 한국과학기술원 : 전기및전자공학전공, 2002.2, [ iii, 52 p. ]
- Keywords
갈륨비소; 다공성 실리콘; MOCVD; Porous Si; GaAs
- Appears in Collection
- EE-Theses_Master(석사논문)
- Files in This Item
- There are no files associated with this item.
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