DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Shin, Hyung-Cheol | - |
dc.contributor.advisor | 신형철 | - |
dc.contributor.author | Gil, Joon-Ho | - |
dc.contributor.author | 길준호 | - |
dc.date.accessioned | 2011-12-14T01:44:56Z | - |
dc.date.available | 2011-12-14T01:44:56Z | - |
dc.date.issued | 1999 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=156233&flag=dissertation | - |
dc.identifier.uri | http://hdl.handle.net/10203/37235 | - |
dc.description | 학위논문(석사) - 한국과학기술원 : 전기및전자공학과, 1999.8, [ v, 46 p. ] | - |
dc.description.abstract | We propose a new high speed and low power SOI(Silicon-On-Insulator) inverter circuit with dynamic threshold voltage that can operate with efficient body-bias control and free supply voltage. The performance of the proposed circuit is evaluated extensively by both the BSIM3SOI circuit simulator and the ATLAS device simulator, and then compared with other previously reported SOI circuits. The proposed circuit is shown to have excellent characteristics. At the supply voltage of 1.5V, the proposed circuit operates 27% faster than the conventional SOI circuit with almost the same power dissipation. The use of retrograde doping in the main MOSFETs can further improves the circuit performance. | eng |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | Body bias | - |
dc.subject | Inverter | - |
dc.subject | SOI | - |
dc.subject | Dynamic threshold | - |
dc.subject | Low power | - |
dc.subject | 저전력 | - |
dc.subject | 바디 바이어스 | - |
dc.subject | 인버터 | - |
dc.subject | SOI | - |
dc.subject | 동적 문턱전압 | - |
dc.title | (A) new dynamic threshold SOI inverter using active body-bias | - |
dc.title.alternative | 활성 바디 바이어스를 이용한 새로운 동적 문턱전압 SOI 인버터 | - |
dc.type | Thesis(Master) | - |
dc.identifier.CNRN | 156233/325007 | - |
dc.description.department | 한국과학기술원 : 전기및전자공학과, | - |
dc.identifier.uid | 000973045 | - |
dc.contributor.localauthor | Shin, Hyung-Cheol | - |
dc.contributor.localauthor | 신형철 | - |
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