학위논문(석사) - 한국과학기술원 : 전기및전자공학과, 1998.2, [ iii, 64 p. ]
EEPROM; Thermal nitride; 프로그래밍; 누설 전류; 스트레스; 터널링 전류 밀도; 전위 장벽; 열 질화 막; F-N tunneling current; Endurance; Coupling ratio; Charge to breakdown; Trapping; Stress-induced leakage current; Electron wave interference; VTGI; Potential barrier; RTP
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