LP-MOCVD를 이용한 InGaAsP epitaxial 성장 및 1.3mm laser diode 제작에 관한 연구Study on the InGaAsP epitaxial growth and 1.3mm laser diode fabrication using LP-MOCVD

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Advisors
권영세researcherKwon, Young-Seresearcher
Description
한국과학기술원 : 전기및전자공학과,
Publisher
한국과학기술원
Issue Date
1997
Identifier
114220/325007 / 000953227
Language
kor
Description

학위논문(석사) - 한국과학기술원 : 전기및전자공학과, 1997.2, [ ii, 55 p. ]

Keywords

저압-MOCVD; 에피탁시; 레이저 다이오드; Laser diode; LP-MOCVD; Epitaxy

URI
http://hdl.handle.net/10203/36922
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=114220&flag=dissertation
Appears in Collection
EE-Theses_Master(석사논문)
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