Analysis of high frequency noise in GaAs MESFET using monte carlo simulation몬테카를로 시뮬레이션을 이용한 갈륨 비소 전계 효과 트랜지스터의 고주파 잡음 해석
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | Hong, Song-Cheol | - |
| dc.contributor.advisor | 홍성철 | - |
| dc.contributor.author | Baek, Jae-Myoung | - |
| dc.contributor.author | 백재명 | - |
| dc.date.accessioned | 2011-12-14 | - |
| dc.date.available | 2011-12-14 | - |
| dc.date.issued | 1998 | - |
| dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=135249&flag=dissertation | - |
| dc.identifier.uri | http://hdl.handle.net/10203/36447 | - |
| dc.description | 학위논문(박사) - 한국과학기술원 : 전기및전자공학과, 1998.2, [ [xi], 110 p. ] | - |
| dc.description.abstract | All of the noise parameters of a GaAs Metal-Semiconductor Field-Effect Transistor (MESFET) are extracted using 2-dimensional Monte-Carlo simulation for the first time. The general procedure for extracting the noise parameters is presented. The spectrums and | eng |
| dc.language | eng | - |
| dc.publisher | 한국과학기술원 | - |
| dc.title | Analysis of high frequency noise in GaAs MESFET using monte carlo simulation | - |
| dc.title.alternative | 몬테카를로 시뮬레이션을 이용한 갈륨 비소 전계 효과 트랜지스터의 고주파 잡음 해석 | - |
| dc.type | Thesis(Ph.D) | - |
| dc.identifier.CNRN | 135249/325007 | - |
| dc.description.department | 한국과학기술원 : 전기및전자공학과, | - |
| dc.identifier.uid | 000935176 | - |
| dc.contributor.localauthor | Hong, Song-Cheol | - |
| dc.contributor.localauthor | 홍성철 | - |
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