(The) development of the X-band 3-D high power T/R module using a selectively anodized aluminum substrate and X-band high power amplifier선택적 양극 산화된 알루미늄 기판을 이용한 X-대역 삼차원 고출력 송수신 모듈 및 하이브리드 알루미늄 IC 기술을 이용한 X-대역 고출력 증폭기 개발

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dc.contributor.advisorKwon, Young-Se-
dc.contributor.advisor권영세-
dc.contributor.authorYeo, Sung-Ku-
dc.contributor.author여성구-
dc.date.accessioned2011-12-14-
dc.date.available2011-12-14-
dc.date.issued2010-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=418662&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/35555-
dc.description학위논문(박사) - 한국과학기술원 : 전기 및 전자공학과, 2010.2, [ xii, 196 p. ]-
dc.description.abstractIn this thesis, we present the design and development of a compact 3-D transmit/receive (T/R) module with a selectively anodized aluminum multilayer package for X-band phased array radar applications. In order to develop proposed package structure, we fabricated embedded vertical via structure and demonstrated X-band tile type 3-D T/R module with passive devices on the aluminum substrate for phase array radar system applications. Also, X-band high power amplifiers and high power SPDT switches for X-band transmit/receive module using hybrid aluminum IC technology based on a selectively anodized aluminum substrate have been proposed and implemented. In the first chapter, the fundamental research results on active phase array radar transmit/receive module and its package technology was introduced. The present package trend of microwave and millimeter-wave ICs is toward decreased volume, lower weight, reduced cost and effective thermal management. Many microwave package companies have developed substrate with low cost, high integration, excellent electrical microwave properties and thermal properties. In the 2nd chapter, principles and fabrication methods of aluminum anodizing for vertical via interconnections are introduced through experiment results and analysis. Vertical via interconnection with quasi-coaxial structure is integrated on thick anodized aluminum oxide with good electrical properties and high thermal conductivity. The microstrip line on the thick anodized aluminum showed lower insertion loss than 0.04 dB/mm up to 15 GHz. Through microstrip-to-quasi coaxial via-hole transitions, top microstrip line signal transmitted to the backside stripline region made by aluminum backside wet etching process had insertion loss as low as -0.75 dB and return loss as high as 12.41 dB at the 10 GHz. In the 3rd chapter, we proposed metal substrate based on multi-chip module (MCM) package structure for X-band phase array radar system using a selectively anodized ...eng
dc.languageeng-
dc.publisher한국과학기술원-
dc.subjectT/R Module-
dc.subject3-D Package-
dc.subjectHigh Power Amplifier-
dc.subjectAnodized Aluminum-
dc.subjectHybrid Aluminum IC Technology-
dc.subject하이브리드 알루미늄 집적회로 기술-
dc.subject송수신 모듈-
dc.subject삼차원 패키지-
dc.subject고출력 전력 증폭기-
dc.subject양극산화된 알루미늄-
dc.title(The) development of the X-band 3-D high power T/R module using a selectively anodized aluminum substrate and X-band high power amplifier-
dc.title.alternative선택적 양극 산화된 알루미늄 기판을 이용한 X-대역 삼차원 고출력 송수신 모듈 및 하이브리드 알루미늄 IC 기술을 이용한 X-대역 고출력 증폭기 개발-
dc.typeThesis(Ph.D)-
dc.identifier.CNRN418662/325007 -
dc.description.department한국과학기술원 : 전기 및 전자공학과, -
dc.identifier.uid020037376-
dc.contributor.localauthorKwon, Young-Se-
dc.contributor.localauthor권영세-
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